Leti, A Research Institute of ST and CEA Tech, announced a collaborative effort to develop silicon-based GaN power switching module manufacturing technology. The silicon-based GaN power technology will enable Italian Semiconductors to meet high-performance, high-power applications, including hybrid and electric vehicle chargers, wireless charging and servers.
The focus of this project is to develop and validate advanced silicon-based GaN power diodes and transistors on 200 mm wafers. Research firm HIS predicts that the market will maintain more than 20% CAGR by 2024. Italy-France Semiconductor and Leti are using the IRT Nanoelectronics Research Institute's framework project to develop on-line manufacturing technology at Leti's 200mm, and are expected to complete verifiable engineering samples by 2019. At the same time, Italy-France Semiconductor will establish a high-quality production line, including GaN/Si heterostructure process, and plans to make its first production at the Tour front-end fabrication wafer plant in France by 2020.
In addition, Leti and Italian Semiconductors are evaluating the advanced packaging technology needed for high-density power modules, given the appeal of silicon-based GaN technology for power products.
"After recognizing the incredible value of wide-band gap semiconductors, Italian-French Semiconductors and CEA-Leti began to collaborate on the development of fabrication and packaging technologies for silicon-based GaN power modules," said Marco Monti, president of Italian-French Semiconductor Automobile and Discrete Components Products. Italy-France Semiconductor has the market-tested ability to produce reliable and high-quality products. After this cooperation, we will further have the most complete GaN and SiC products and functional portfolio in the industry. "
Leti Chief Executive Emmanuel Sabonnadiere said: "Leti's team used its 200 mm universal platform to fully support the strategic planning of Italian semiconductor silicon-based GaN power products, and completed preparations to transfer the technology to the Italian semiconductor Tour plant's silicon-based GaN dedicated production line. This collaboration requires the joint efforts of both teams and the use of the IRT nanoelectronics institute's framework plan to expand the expertise needed and to innovate from the component and system levels from scratch. "
