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- Technical Parameter
UMW 50N06 60V N-ChanneI MOSFET 1.Description The 50N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.It can be used in a wide variety of applications.2.Features VDS (V)=60V ID=50A(VGS=-10V) RDS(ON)=12mΩ(VGS=10V) RDS(ON)=16mΩ(VGS=4.5V)
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- Commodity Description
Single N-Channel MOSFET - 60V 50A
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