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- Technical Parameter
Product Catalog: MOSFET (Field Effect Transistor)Quantity: 1 × N-ChannelDrain-Source Voltage (VDSS): 650VContinuous Drain Current (ID): 4AOn-Resistance (RDS(on)): 2.8Ω @ VGS = 10VPower Dissipation (PD): 33WGate Threshold Voltage (VGS(th)): 4V @ ID = 250μATotal Gate Charge (Qg): 15.8nC @ VGS = 10VInput Capacitance (Ciss): 500pF @ VDS = 25VOperating Temperature Range: -55℃ to +150℃Type: N-Channel
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- Commodity Description
1× N-Channel 650V 4A MOSFET
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