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- Technical Parameter
UMW 20N06 60V N-ChanneI MOSFET1.Description The 20N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate cha rge. It can be used in a wide variety of applications.2.1Features VDS (V)=60V ID=20A(VGS=10V) RDS(ON)<23mΩ(VGS=10V) RDS(ON)<29mΩ(VGS=4.5V)2.2Features Advanced Trench Technology Excellent RDS(ON) and Low Gate Charge Lead free product is acquired
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- Commodity Description
Single N-Channel MOSFET - 60V 20A
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